TY - JOUR
T1 - Cryogenic pull-down voltage of microelectromechanical switches
AU - Noel, Julien G.
AU - Bogozi, Albert
AU - Vlasov, Yuriy A.
AU - Larkins, Grover L.
N1 - Funding Information:
Manuscript received September 27, 2007; revised January 28, 2008. This work was supported by Florida International University 2007 Dissertation Year Fellowship. Subject Editor D. DeVoe. J. G. Noel, Y. A. Vlasov, and G. L. Larkins, Jr., are with Florida International University, Miami, FL 33174 USA (e-mail: [email protected]; [email protected]). A. Bogozi is with the Air Force Research Laboratory, Wright–Patterson Air Force Base, Columbus, OH 45433 USA. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/JMEMS.2008.918404
PY - 2008
Y1 - 2008
N2 - Capacitively shunted microelectromechanical (MEM) switches were designed, fabricated and tested in an earlier work. The switch is composed of a coplanar waveguide (CPW) structure with an Au bridge membrane suspended above a center conductor covered with a BaTiO3 dielectric. The membrane is actuated by electrostatic force acting between the center conductor of the CPW and the membrane when a voltage is applied. We have noted that pull-down voltages for MEM switches always demonstrate an extremely strong temperature dependence when actuated at cryogenic temperature. This paper improves the pull-down voltage prediction of MEM switches at cryogenic temperature using the mechanical properties of the bridge, thin film and substrate materials used in the switch. The theoretical and experimental results of the actuation voltages of these structures as a function of temperature are presented and compared.
AB - Capacitively shunted microelectromechanical (MEM) switches were designed, fabricated and tested in an earlier work. The switch is composed of a coplanar waveguide (CPW) structure with an Au bridge membrane suspended above a center conductor covered with a BaTiO3 dielectric. The membrane is actuated by electrostatic force acting between the center conductor of the CPW and the membrane when a voltage is applied. We have noted that pull-down voltages for MEM switches always demonstrate an extremely strong temperature dependence when actuated at cryogenic temperature. This paper improves the pull-down voltage prediction of MEM switches at cryogenic temperature using the mechanical properties of the bridge, thin film and substrate materials used in the switch. The theoretical and experimental results of the actuation voltages of these structures as a function of temperature are presented and compared.
KW - Cryogenic temperature
KW - Microelectromechanical (MEM) devices
KW - Microwave switches
KW - Pull-down voltage
KW - Radio frequency (RF) devices
UR - http://www.scopus.com/inward/record.url?scp=64649100618&partnerID=8YFLogxK
U2 - 10.1109/JMEMS.2008.918404
DO - 10.1109/JMEMS.2008.918404
M3 - Article
AN - SCOPUS:64649100618
SN - 1057-7157
VL - 17
SP - 351
EP - 355
JO - Journal of Microelectromechanical Systems
JF - Journal of Microelectromechanical Systems
IS - 2
ER -