TY - JOUR
T1 - Influence of parameters of fabrication on quality and performance of superconducting MEM switches
AU - Brzhezinskaya, Mariya
AU - Noel, Julian
AU - Martinez, Jose
AU - Hijazi, Yazan
AU - Vlasov, Yuriy A.
AU - Larkins, Grover L.
N1 - Funding Information:
Manuscript received October 4, 2004. This work was supported by the U.S. Air Force Office of Scientific Research under grant F49620-02-1-0044. M. Brzhezinskaya, J. Noel, J. Martinez, Y. Hijazi, and G. L. Larkins, Jr., are with the Florida International University, Miami, FL 33174 USA (e-mail: [email protected]; [email protected]; [email protected]). Y. A. Vlasov is with Florida International University, Miami, FL 33174 USA, on leave from the Ioffe Physico-Technical Institute, St. Petersburg, Russia (e-mail: [email protected]). Digital Object Identifier 10.1109/TASC.2005.850190
PY - 2005/6
Y1 - 2005/6
N2 - In earlier work a capacitively shunted super-conducting MicroElectroMechanical (MEM) switch has been designed and fabricated. The switch is composed of high temperature superconducting (HTS) YBa2Cu 3O7 coplanar waveguide structure with a gold bridge membrane suspended above an area of the center conductor covered with BaTiO 3 dielectric. The switch demonstrated an insertion loss of less than 0.007 dB with 30 dB isolation at 3 GHz. These switches have been shown to be viable, however, issues of the dielectric material deposition and gold bridge release process posed limitations on the yield and switch cycling. In this work we report on the issues encountered and improvements made in the development of HTS MEMS switches for use in tunable RF devices.
AB - In earlier work a capacitively shunted super-conducting MicroElectroMechanical (MEM) switch has been designed and fabricated. The switch is composed of high temperature superconducting (HTS) YBa2Cu 3O7 coplanar waveguide structure with a gold bridge membrane suspended above an area of the center conductor covered with BaTiO 3 dielectric. The switch demonstrated an insertion loss of less than 0.007 dB with 30 dB isolation at 3 GHz. These switches have been shown to be viable, however, issues of the dielectric material deposition and gold bridge release process posed limitations on the yield and switch cycling. In this work we report on the issues encountered and improvements made in the development of HTS MEMS switches for use in tunable RF devices.
KW - High-temperature superconductors
KW - Microelectromechanical devices
KW - Microwave filters
KW - Superconducting switches
UR - http://www.scopus.com/inward/record.url?scp=22044440169&partnerID=8YFLogxK
U2 - 10.1109/TASC.2005.850190
DO - 10.1109/TASC.2005.850190
M3 - Article
AN - SCOPUS:22044440169
SN - 1051-8223
VL - 15
SP - 1032
EP - 1035
JO - IEEE Transactions on Applied Superconductivity
JF - IEEE Transactions on Applied Superconductivity
IS - 2 PART I
ER -