Graphene as thin film infrared optoelectronic sensor

Gilgueng Hwang, Juan Camilo Acosta, Emir Vela, Sinan Haliyo, Stéphane Régnier

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

22 Scopus citations

Abstract

We present the conductometric behavior of a single atomic carbon nanostructure (graphene) that could be promising to infrared optoelectronic applications. A graphene nanomanipulation system with focused infrared laser source for optoelectronic property characterizations is implemented. The feasibility of mechanical and electrical probing manipulations on two-dimensional thin film nanostructures is studied. Using this system, we revealed the infrared optoelectronic properties of mono- and multilayer graphene. The obtained optoelectronic parameters are compared to the single- and multi-walled nanotubes. A graphene infrared sensor is prototyped by direct writing of electrodes using gold nanoink fountain-pen method and is analyzed by electrical probing. Results show that graphene could be a promising building block for thin film optoelectronic devices.

Original languageEnglish
Title of host publicationISOT 2009 - International Symposium on Optomechatronic Technologies
Pages169-174
Number of pages6
DOIs
StatePublished - 2009
Externally publishedYes
EventISOT 2009 - International Symposium on Optomechatronic Technologies - Istanbul, Turkey
Duration: 21 Sep 200923 Sep 2009

Publication series

NameISOT 2009 - International Symposium on Optomechatronic Technologies

Conference

ConferenceISOT 2009 - International Symposium on Optomechatronic Technologies
Country/TerritoryTurkey
CityIstanbul
Period21/09/0923/09/09

Keywords

  • Component
  • Conductometric
  • Graphene
  • Infrared optoelectronics
  • Nanomanipulation
  • Photoconductivity
  • Temperature dependence

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