A switched high-Tc superconductor microstrip resonator using a MEM switch

Julien Noel; Yazan Hijazi; José Martinez; Yuriy A. Vlasov; Grover L. Larkins

doi:10.1088/0953-2048/16/12/026

A switched high-T_c superconductor microstrip resonator using a MEM switch

Julien Noel, Yazan Hijazi, José Martinez, Yuriy A. Vlasov, Grover L. Larkins

Research output: Contribution to journal › Conference article › peer-review

22 Scopus citations

Abstract

We have used a high performance (less than 0.05 dB insertion loss, greater than 30 dB isolation) high-T_c superconductor based micro electromechanical (MEM) switch to insert a shunt microstrip resonator into a microstrip transmission line thus forming a 'T'-resonator structure. This allows the insertion of a series of notches and peaks (depending on termination of the shunt line and the harmonic in use) into the transmission line's transfer function thus forming a rudimentary switched filter. The 'T'-resonator is designed for a resonant frequency of 3.5 GHz and is implemented using high-T_c YBa₂Cu₃O₇, BaTiO₃ is used as a dielectric patch underneath a suspended gold membrane. The design, fabrication, testing and most recent results are presented in this paper.

Original language	English
Pages (from-to)	1438-1441
Number of pages	4
Journal	Superconductor Science and Technology
Volume	16
Issue number	12
DOIs	https://doi.org/10.1088/0953-2048/16/12/026
State	Published - Dec 2003
Externally published	Yes
Event	ISEC 2003, International Superconducting Electronics Conference - Sydney,NSW, Australia Duration: 7 Jul 2003 → 11 Jul 2003

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10.1088/0953-2048/16/12/026

Cite this

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title = "A switched high-Tc superconductor microstrip resonator using a MEM switch",

abstract = "We have used a high performance (less than 0.05 dB insertion loss, greater than 30 dB isolation) high-Tc superconductor based micro electromechanical (MEM) switch to insert a shunt microstrip resonator into a microstrip transmission line thus forming a 'T'-resonator structure. This allows the insertion of a series of notches and peaks (depending on termination of the shunt line and the harmonic in use) into the transmission line's transfer function thus forming a rudimentary switched filter. The 'T'-resonator is designed for a resonant frequency of 3.5 GHz and is implemented using high-Tc YBa2Cu3O7, BaTiO3 is used as a dielectric patch underneath a suspended gold membrane. The design, fabrication, testing and most recent results are presented in this paper.",

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T1 - A switched high-Tc superconductor microstrip resonator using a MEM switch

AU - Noel, Julien

AU - Hijazi, Yazan

AU - Martinez, José

AU - Vlasov, Yuriy A.

AU - Larkins, Grover L.

PY - 2003/12

Y1 - 2003/12

N2 - We have used a high performance (less than 0.05 dB insertion loss, greater than 30 dB isolation) high-Tc superconductor based micro electromechanical (MEM) switch to insert a shunt microstrip resonator into a microstrip transmission line thus forming a 'T'-resonator structure. This allows the insertion of a series of notches and peaks (depending on termination of the shunt line and the harmonic in use) into the transmission line's transfer function thus forming a rudimentary switched filter. The 'T'-resonator is designed for a resonant frequency of 3.5 GHz and is implemented using high-Tc YBa2Cu3O7, BaTiO3 is used as a dielectric patch underneath a suspended gold membrane. The design, fabrication, testing and most recent results are presented in this paper.

AB - We have used a high performance (less than 0.05 dB insertion loss, greater than 30 dB isolation) high-Tc superconductor based micro electromechanical (MEM) switch to insert a shunt microstrip resonator into a microstrip transmission line thus forming a 'T'-resonator structure. This allows the insertion of a series of notches and peaks (depending on termination of the shunt line and the harmonic in use) into the transmission line's transfer function thus forming a rudimentary switched filter. The 'T'-resonator is designed for a resonant frequency of 3.5 GHz and is implemented using high-Tc YBa2Cu3O7, BaTiO3 is used as a dielectric patch underneath a suspended gold membrane. The design, fabrication, testing and most recent results are presented in this paper.

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DO - 10.1088/0953-2048/16/12/026

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T2 - ISEC 2003, International Superconducting Electronics Conference

Y2 - 7 July 2003 through 11 July 2003

ER -

A switched high-T_c superconductor microstrip resonator using a MEM switch

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